STPS8H100DEE View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS8H100DEE Datasheet PDF : 8 Pages
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Characteristics
1
Characteristics
STPS8H100DEE
Table 2. Absolute ratings (limiting values Tamb = 25 °C unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
100
V
IF(RMS) Forward rms current
15
A
IF(AV) Average forward current
Tc = 150 °C = 0.5
8
A
IFSM
PARM(1)
Surge non repetitive forward current tp = 10 ms sinusoidal
Repetitive peak avalanche power tp = 10 µs Tj = 125 °C
100
A
480
W
Tstg
Storage temperature range
-65 to +175 °C
Tj
Maximum operating junction temperature
175
°C
1. For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy
measurements and diode validation in the avalanche are provided in the STMicroelectronics Application
notes AN1768, “Admissible avalanche power of schottky diodes” and AN2025, “Converter improvement
using Schottky rectifier avalanche specification”.
Table 3. Thermal resistance
Symbol
Parameter
Rth(j-c) Junction to case
Value
4
Unit
°C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1)
Reverse leakage
current
Tj = 25 °C
Tj = 125 °C
VR = VRRM
-
-
Tj = 25 °C IF = 8A
Tj = 125 °C
-
VF(2)
Forward voltage drop Tj = 25 °C IF = 10A
Tj = 125 °C
-
Tj = 25 °C IF = 16A
Tj = 125 °C
-
1. Pulse test: tp = 5 ms, < 2%
2. Pulse test: tp = 380 µs, < 2%
To evaluate the conduction losses use the following equation:
P = 0.61 x IF(AV) + 0.0088 x IF2(RMS)
4.5
µA
2
6
mA
0.82
0.60 0.68
0.85
V
0.62 0.70
0.90
0.68 0.75
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Doc ID 023272 Rev 1
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