TS80C51RA2/RD2
TS83C51RB2/RC2/RD2
TS87C51RB2/RC2/RD2
A0-A12
Programming Cycle
Read/Verify Cycle
D0-D7
ALE/PROG
12.75V
EA/VPP 5V
0V
Control sig-
nals
Data In
100µs
Data Out
Figure 19. Programming and Verification Signal’s Waveform
8.4. EPROM Erasure (Windowed Packages Only)
Erasing the EPROM erases the code array, the encryption array and the lock bits returning the parts to full
functionality.
Erasure leaves all the EPROM cells in a 1’s state (FF).
8.4.1. Erasure Characteristics
The recommended erasure procedure is exposure to ultraviolet light (at 2537 Å) to an integrated dose at least 15
W-sec/cm2. Exposing the EPROM to an ultraviolet lamp of 12,000 µW/cm2 rating for 30 minutes, at a distance
of about 25 mm, should be sufficient. An exposure of 1 hour is recommended with most of standard erasers.
Erasure of the EPROM begins to occur when the chip is exposed to light with wavelength shorter than approximately
4,000 Å. Since sunlight and fluorescent lighting have wavelengths in this range, exposure to these light sources
over an extended time (about 1 week in sunlight, or 3 years in room-level fluorescent lighting) could cause
inadvertent erasure. If an application subjects the device to this type of exposure, it is suggested that an opaque
label be placed over the window.
Rev. C - 06 March, 2001
55