STP7N52DK3 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP7N52DK3
STMicroelectronics
STP7N52DK3 Datasheet PDF : 16 Pages
| |||
Electrical characteristics
STD7N52DK3, STF7N52DK3, STP7N52DK3
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
Gate threshold voltage VDS = VGS, ID = 50 µA
Static drain-source on
resistance
VGS = 10 V, ID = 3 A
Min. Typ. Max. Unit
525
V
1 µA
50 µA
± 10 µA
3 3.75 4.5 V
0.95 1.15 Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
870
pF
-
70
- pF
13
pF
Co(tr)(1)
Co(er)(2)
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
VDS = 0 to 525 V, VGS = 0
-
53
- pF
-
74
- pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
3.5
-
Ω
Qg Total gate charge
VDD = 420 V, ID = 6 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 20)
33
nC
-
5
- nC
19
nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
4/16
Doc ID 16387 Rev 2
Share Link: 