STP7N52DK3 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP7N52DK3

N-channel 525 V, 0.95 Ω, 6 A, DPAK, TO-220FP, TO-220 SuperFREDmesh3™ Power MOSFET

STMicroelectronics 

Electrical characteristics

STD7N52DK3, STF7N52DK3, STP7N52DK3

Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs

vs temperature

temperature

VGS(th)

(norm)

1.10

AM07194v1

RDS(on)

(norm)

2.5

AM07195v1

1.00

2.0

1.5

0.90

1.0

0.80

0.5

0.70

-75 -25 25

75 125 TJ(°C)

0.0

-75 -25 25

75 125 TJ(°C)

Figure 16. Source-drain diode forward

characteristics

Figure 17. Normalized BVDSS vs temperature

VSD

(V)

1.0

0.9

AM07198v1

TJ=-50°C

BVDSS

(norm)

1.10

AM07196v1

0.8

1.05

TJ=25°C

0.7

TJ=150°C

1.00

0.6

0.95

0.5

0.4

0

10 20 30 40 50 ISD(A)

0.90

-75 -25

25

75

125 TJ(°C)

Figure 18. Maximum avalanche energy vs

starting Tj

EAS

(mJ)

110

100

90

80

70

60

50

40

30

20

10

0

0

ID=3 A

VDD=50 V

AM07197v1

20 40 60 80 100 120 140 TJ(°C)

8/16

Doc ID 16387 Rev 2

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