2N6371 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2N6371 Datasheet PDF : 2 Pages
| |||
, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N6371
DESCRIPTION
• Excellent Safe Operating Area
• DC Current Gain-
:hFE=15-60(Min)@lc = 8A
• Low Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ |c = 8A
APPLICATIONS
• Series and shunt regulators
• High-fidelity amplifiers
• Power-switching circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25 1 )
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50
V
VCER
Collector-Emitter Voltage RBE~ 100^
45
V
VCEV
Collector-Emitter Voltage VBE= -1 .5V
50
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
15
A
IB
Base Current-Continuous
7
A
PC
Tj
Junction Temperature
Tstg
Storage Temperature
117
W
200
•c
-65-200 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth J-c Thermal Resistance, Junction to Case
MAX UNIT
1.5 "C/W
3
\ BASE
1
K^
^|
2
PIN
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
*H
t
u :„ I
I -, c
I
-*(U-D 3 PL
~— U —"
V-
s~
/ • ^ f D ^ \ ct
><_^/ &7$"— ^
•B
J
1
X-gg
nun
DIM MIN MAX
A
39.00
B 25.30 2S.67
C 7.30
8.30
D
0.90 1 10
£
140 1.60
$
10.92
H
54B
K 1140 1350
L 1675 1705
N 1940 19.62
a 400 420
U 3000 3020
V
430 450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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