2N6371 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2N6371 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 200mA; IB= 0
VcER(SUS) Collector-Emitter Sustaining Voltage I0= 200mA; RBE=1 00 Q
VcEV(SUS) Collector-Emitter Sustaining Voltage lc= 100mA; VBE= -1.5V
VcE(sat)-1 Collector-Emitter Saturation Voltage lc= 8A; IB= 0.8A
VcE(sat)-2 Collector-Emitter Saturation Voltage IC=16A;IB=4A
VBE(on) Base-Emitter On Voltage
lc=16A;VCE=4V
ICEO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 25V; IB= 0
VCE= 45V; VBE= -1.5V
VCE= 40V; VBE= -1.5V, TC=150°C
VEB= 5V; lc= 0
hFE-1
DC Current Gain
lc= 8A; VCE= 4V
hpE-2
Is/b
DC Current Gain
Second Breakdown Collector
Current with Base Forward Biased
IC=16A;VGE=4V
VCE= 40V,t= 1.0s,Nonrepetitive
2N6371
MIN MAX UNIT
40
V
45
V
50
V
1.5
V
4.0
V
4.0
V
1.5 mA
2.0
10
mA
10
mA
15
60
4
2.9
A
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