STP4N80K5 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP4N80K5
STMicroelectronics
STP4N80K5 Datasheet PDF : 23 Pages
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STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
DPAK,
IPAK
TO-220FP
TO-220
VDS Drain-source voltage
VGS Gate- source voltage
ID
Drain current (continuous) at TC = 25 °C
3
ID
Drain current (continuous) at TC = 100 °C
1.7
IDM (2) Drain current (pulsed)
12
PTOT Total dissipation at TC = 25 °C
60
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by TJ max)
EAS
dv/dt(3)
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
Peak diode recovery voltage slope
dv/dt(4) MOSFET dv/dt ruggedness
VISO
TJ
Tstg
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s, TC = 25 °C)
Operating junction temperature
Storage temperature
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area
3. ISD < 3 A, di/dt < 100 A/µs, VDS(peak) ≤ V(BR)DSS
4. VDS ≤ 640 V
800
±30
3 (1)
3
1.7 (1)
1.7
12 (1)
12
20
60
1
74.5
4.5
50
2500
-55 to 150
Unit
V
V
A
A
A
W
A
mJ
V/ns
V/ns
V
°C
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Rthj-pcb(1) Thermal resistance junction-pcb max
1. When mounted on 1inch² FR-4 board, 2 oz Cu
DPAK,
IPAK
2.08
50
Value
TO-220FP TO-220
6.25
2.08
62.5
Unit
°C/W
°C/W
°C/W
DocID025105 Rev 3
3/23
23
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