STP4N80K5 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP4N80K5

N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

STMicroelectronics 

Electrical characteristics

STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5

Figure 14. Normalized on-resistance vs

temperature

RDS(on)

(norm)

2.4

VGS=10V

ID=1.5 A

AM15640v1

2

1.6

1.2

0.8

0.4

-50

0

50

100 TJ(°C)

Figure 16. Normalized VDS vs temperature

VDS

(norm)

1.1

ID = 1mA

AM15642v1

1.06

1.02

0.98

0.94

0.9

-50

0

50

100 TJ(°C)

Figure 15. Source-drain diode forward

characteristics

VSD

AM15994v1

(V)

1

TJ=-50°C

0.9

TJ=25°C

0.8

0.7

TJ=150°C

0.6

0.5

0.5 1

1.5

2

2.5 ISD(A)

Figure 17. Maximum avalanche energy vs.

starting TJ

EAS (mJ)

AM15995v1

60

40

20

0

0

40

80

120

TJ(°C)

8/23

DocID025105 Rev 3

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