STM32F217RGT7 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STM32F217RGT7

ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/128+4KB RAM, crypto, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera

STMicroelectronics 

Electrical characteristics

STM32F21xxx

Table 35. Flash memory programming

Symbol

Parameter

Conditions

Min(1) Typ Max(1) Unit

tprog

Word programming time

Program/erase parallelism

(PSIZE) = x 8/16/32

-

Program/erase parallelism

(PSIZE) = x 8

-

tERASE16KB Sector (16 KB) erase time

Program/erase parallelism

(PSIZE) = x 16

-

16 100(2) µs

400 800

300 600 ms

Program/erase parallelism

(PSIZE) = x 32

-

250 500

Program/erase parallelism

(PSIZE) = x 8

-

1200 2400

tERASE64KB Sector (64 KB) erase time

Program/erase parallelism

(PSIZE) = x 16

-

700 1400 ms

Program/erase parallelism

(PSIZE) = x 32

-

550 1100

Program/erase parallelism

(PSIZE) = x 8

-

2

4

tERASE128KB

Sector (128 KB) erase time

Program/erase parallelism

(PSIZE) = x 16

-

Program/erase parallelism

(PSIZE) = x 32

-

Program/erase parallelism

(PSIZE) = x 8

-

tME

Mass erase time

Program/erase parallelism

(PSIZE) = x 16

-

Program/erase parallelism

(PSIZE) = x 32

-

1.3 2.6 s

1

2

16 32

11 22 s

8

16

Vprog Programming voltage

32-bit program operation 2.7

-

3.6 V

16-bit program operation 2.1

-

3.6 V

8-bit program operation

1.8

-

3.6 V

1. Based on characterization, not tested in production.

2. The maximum programming time is measured after 100K erase operations.

Table 36. Flash memory programming with VPP

Symbol

Parameter

Conditions

tprog

Double word programming

tERASE16KB Sector (16 KB) erase time

tERASE64KB Sector (64 KB) erase time

tERASE128KB Sector (128 KB) erase time

tME

Mass erase time

Vprog

Programming voltage

TA = 0 to +40 °C

VDD = 3.3 V

VPP = 8.5 V

Min(1) Typ Max(1) Unit

-

16 100(2) µs

-

230

-

-

490

-

ms

-

875

-

-

6.9

-

s

2.7

-

3.6 V

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Doc ID 17050 Rev 8

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