STB/F/I/P/W32N65M5
Electrical characteristics
Figure 8. Output characteristics
ID
(A)
VGS=10V
50
Figure 9.
AM05451v1
ID
(A)
50
Transfer characteristics
VDS=20V
AM05452v1
40
40
30
30
6V
20
20
10
5V
0
0 5 10 15 20 25 30 VDS(V)
10
0
0
24
6
8 10 VGS(V)
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
VGS
(V)
12 VDS
VDD=520V
ID=12A
AM05457v1
560
VGS
480
RDS(on)
(Ω)
0.111
AM05454v1
10
400
0.091
8
320
ID=12A
0.071
VGS=10V
6
240
4
160
0.051
2
80
0.031
0
0
0
20
40
60
80 Qg(nC)
0.011
0
5 10 15 20 25 ID(A)
Figure 12. Capacitance variations
C
(pF)
10000
1000
100
10
1
0.1
1
10
100
Figure 13. Output capacitance stored energy
AM05455v1
Eoss
(µJ)
14
AM05456v1
Ciss
12
10
8
Coss
6
4
Crss
VDS(V)
2
0
0 100 200 300 400 500 600 VDS(V)
Doc ID 15316 Rev 4
7/22