Electrical characteristics
STB/F/I/P/W32N65M5
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.10
AM05459v1
RDS(on)
(norm)
2.1
AM05460v1
1.9
1.00
1.7
1.5
0.90
1.3
1.1
0.80
0.9
0.70
-50 -25 0 25 50 75 100 TJ(°C)
0.7
0.5
-50 -25 0
25 50 75 100 TJ(°C)
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized BVDSS vs temperature
VSD
(V)
TJ=-50°C
1.2
1.0
0.8
0.6
TJ=150°C
0.4
AM05461v1
TJ=25°C
BVDSS
(norm)
1.07
1.05
1.03
1.01
0.99
0.97
AM05453v1
0.2
0.95
0
0 10 20 30 40 50 ISD(A)
0.93
-50 -25 0 25 50 75 100 150 TJ(°C)
Figure 18. Switching losses vs gate resistance
(1)
E
(μJ)
ID=15A
VCL=400V
400
VGS=10V
Eon
AM05458v1
300
Eoff
200
100
0
0
10
20
30
40
RG(Ω)
1. Eon including reverse recovery of a SiC diode
8/22
Doc ID 15316 Rev 4