STP7N65M2 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP7N65M2

N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2 Power MOSFETs in TO-220 and IPAK packages

STMicroelectronics 

STP7N65M2, STU7N65M2

N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2

Power MOSFETs in TO-220 and IPAK packages

Datasheet - production data

TAB

TAB

3

TO-220

2

1

IPAK

123

Figure 1: Internal schematic diagram

D(2, TAB)

G(1)

Features

Order code

STP7N65M2

STU7N65M2

VDS

RDS(on)

max

ID

650 V 1.15 Ω 5 A

650 V 1.15 Ω 5 A

 Extremely low gate charge

 Excellent output capacitance (Coss) profile

 100% avalanche tested

 Zener-protected

Applications

 Switching applications

Description

These devices are N-channel Power MOSFETs

developed using the MDmesh™ M2 technology.

Thanks to the strip layout associated with an

improved vertical structure, the device exhibits

both low on-resistance and optimized switching

characteristics. It is therefore suitable for the

most demanding high efficiency converters.

S(3)

Order code

STP7N65M2

STU7N65M2

AM01476v1_tab

Table 1: Device summary

Marking

Package

7N65M2

TO-220

7N65M2

IPAK

Packaging

Tube

Tube

May 2015

DocID026788 Rev 3

This is information on a product in full production.

1/18

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