STM8S007C8T6TR(2015) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STM8S007C8T6TR
(Rev.:2015)

Value line, 24 MHz STM8S 8-bit MCU, 64 Kbytes Flash, true data EEPROM, 10-bit ADC, timers, 2 UARTs, SPI, I²C

STMicroelectronics 

STM8S007C8

Electrical characteristics

9.3.6 I/O port pin characteristics

General characteristics

Subject to general operating conditions for VDD and TA unless otherwise specified. All

unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or

an external pull-up or pull-down resistor.

Table 35. I/O static characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIL

Input low level

voltage

-0.3

-

0.3 x VDD

V

VIH

Input high level

voltage

VDD = 5 V

0.7 x VDD

-

VDD + 0.3 V

V

Vhys Hysteresis(1)

-

700

-

mV

Rpu Pull-up resistor

VDD = 5 V, VIN = VSS

30

55

80

k

tR, tF

Rise and fall time

(10% - 90%)

Fast I/Os

Load = 50 pF

Standard and high sink I/Os

Load = 50 pF

-

-

-

20(2)

ns

-

125(2)

ns

Input leakage

Ilkg current,

VSS  VIN VDD

analog and digital

-

-

±1

µA

Ilkg ana

Analog input

leakage current

VSS VIN VDD

-

-

±250 (3)

nA

Ilkg(inj)

Leakage current in

adjacent I/O

Injection current ±4 mA

-

-

±1(3)

µA

1. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested in production.

2. Data guaranteed by design, not tested in production.

3. Data based on characterization results, not tested in production.

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