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STM8S007C8T6TR(2015) View Datasheet(PDF) - STMicroelectronics

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STM8S007C8T6TR Datasheet PDF : 92 Pages
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STM8S007C8
Electrical characteristics
Figure 30. Typical NRST pull-up resistance vs VDD @ 3 temperatures
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9''>9@
069
Figure 31. Typical NRST pull-up current vs VDD @ 3 temperatures




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9''>9@
DLF
The reset network shown in Figure 32 protects the device against parasitic resets. The user
must ensure that the level on the NRST pin can go below the VIL max. level specified in
Table 35. Otherwise the reset is not taken into account internally. For power consumption
sensitive applications, the capacity of the external reset capacitor can be reduced to limit
charge/discharge current. If the NRST signal is used to reset the external circuitry, care
must be taken of the charge/discharge time of the external capacitor to fulfill the external
device’s reset timing conditions. The minimum recommended capacity is 10 nF.
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