STM8S007C8T6TR(2015) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STM8S007C8T6TR
(Rev.:2015)

Value line, 24 MHz STM8S 8-bit MCU, 64 Kbytes Flash, true data EEPROM, 10-bit ADC, timers, 2 UARTs, SPI, I²C

STMicroelectronics 

STM8S007C8

Electrical characteristics

Electromagnetic interference (EMI)

Emission tests conform to the SAE IEC 61967-2 standard for test software, board layout

and pin loading.

Table 46. EMI data

Conditions

Symbol Parameter

General conditions

Monitored

frequency band

SEMI

Peak level

SAE EMI

level

VDD 5 V 

TA 25 °C

LQFP48 package

conforming to SAE IEC

61967-2

0.1MHz to 30 MHz

30 MHz to 130 MHz

130 MHz to 1 GHz

SAE EMI level

1. Data based on characterization results, not tested in production.

Max fHSE/fCPU(1)

16 MHz/ 16 MHz/ 24 MHz/

8 MHz 16 MHz 24 MHz

Unit

14

13

24

19

23

17 dBµV

-4

-4

7

1.5

2

2.5

Absolute maximum ratings (electrical sensitivity)

Based on two different tests (ESD and LU) using specific measurement methods, the

product is stressed in order to determine its performance in terms of electrical sensitivity.

For more details, refer to the application note AN1181.

Electrostatic discharge (ESD)

Electrostatic discharges (3 positive then 3 negative pulses separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test

conforms to the JESD22-A114A/A115A standard. For more details, refer to the application

note AN1181.

Table 47. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Class

Maximum

value(1)

Unit

VESD(HBM)

Electrostatic discharge voltage

(Human body model)

TA 25°C, conforming to

JESD22-A114

A

VESD(CDM)

Electrostatic discharge voltage

(Charge device model)

TA 25°C, conforming to

JESD22-C101

IV

2000

V

1000

V

1. Data based on characterization results, not tested in production.

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