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STM8S003K3(2012) View Datasheet(PDF) - STMicroelectronics

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STM8S003K3 Datasheet PDF : 100 Pages
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STM8S003K3 STM8S003F3
Electrical characteristics
Conditions
Symbol Parameter
General
conditions
Max fHSE/fCPU (1)
Monitored
frequency band 16 MHz/ 16 MHz/
8 MHz 16 MHz
Unit
Conforming to 130 MHz
SAE IEC
61967-2
130 MHz to
5
5
1 GHz
SAE EMI
level
SAE EMI level 2.5
2.5
(1) Data based on characterisation results, not tested in production.
9.3.11.4
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, DLU and LU) using specific measurement methods, the
product is stressed to determine its performance in terms of electrical sensitivity. For more
details, refer to the application note AN1181.
9.3.11.5
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied
to the pins of each sample according to each pin combination. The sample size depends on
the number of supply pins in the device (3 parts*(n+1) supply pin). One model can be simulated:
Human body model. This test conforms to the JESD22-A114A/A115A standard. For more
details, refer to the application note AN1181.
Table 49: ESD absolute maximum ratings
Symbol Ratings
Conditions
Class Maximum Unit
value(1)
VESD(HBM) Electrostatic discharge
voltage
TA = 25°C, conforming to
JESD22-A114
A
4000
(Human body model)
V
VESD(CDM) Electrostatic discharge TA LQFP32 package =
voltage
25°C, conforming to
IV 1000
(Charge device model) SD22-C101
DocID018576 Rev 3
87/100

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