STM8S10XS6U3ATR View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STM8S10XS6U3ATR

Access line, 16 MHz STM8S 8-bit MCU, up to 32 Kbyte Flash, integrated EEPROM, 10-bit ADC, timers, UART, SPI, I²C

STMicroelectronics 

Electrical characteristics

STM8S105x4/6

10.3.5

Memory characteristics

RAM and hardware registers

Table 35. RAM and hardware registers

Symbol

Parameter

Conditions

Min

Unit

VRM

Data retention mode(1)

Halt mode (or reset)

VIT-max(2)

V

1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware

registers (only in halt mode). Guaranteed by design, not tested in production.

2. Refer to Section 10.3: Operating conditions for the value of VIT-max.

Flash program memory/data EEPROM memory

Symbol

Table 36. Flash program memory/data EEPROM memory

Parameter

Conditions

Min(1) Typ Max Unit

VDD

Operating voltage 

(all modes, execution/write/erase)

fCPU≤ 16 MHz

2.95 - 5.5

V

Standard programming time (including

erase) for byte/word/block 

-

tprog

(1 byte/4 byte/128 byte)

Fast programming time for 1 block 

(128 byte)

-

-

6 6.6

ms

-

3 3.33

terase

NRW

tRET

IDD

Erase time for 1 block (128 byte)

Erase/write cycles 

(program memory)(2)

Erase/write cycles (data memory)(2)

Data retention (program and data

memory) after 10k erase/write cycles

at TA= +55 °C

Data retention (data memory) after

300k erase/write cycles at 

TA= +125°C

Supply current (Flash programming or

erasing for 1 to 128 byte)

-

TA = +85 °C

TA = +125 °C

TRET = 55 °C

TRET = 85 °C

-

-

3 3.33

10k -

300k 1M

-

cycle

-

20 -

1

-

-

year

-

-

2

- mA

1. Data based on characterization results, not tested in production.

2. The physical granularity of the memory is 4 byte, so cycling is performed on 4 byte even when a

write/erase operation addresses a single byte.

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DocID14771 Rev 15

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