ESDA18-1F2(2005) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
ESDA18-1F2 Datasheet PDF : 7 Pages
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ESDA18-1F2
Table 2: Absolute Ratings (limiting value, per diode)
Symbol
Parameter and test conditions
Peak pulse power dissipation
10 / 1000 µs pulse
PPP
Peak pulse power dissipation
8 / 20 µs pulse
IFSM Non repetitive surge peak forward current
Tj
Maximum operating junction temperature
Tstg Storage temperature range
Value
100
Tj initial = Tamb
700
tp=10 ms
Tj initial = Tamb
8
125
- 65 to + 175
Unit
W
A
°C
°C
Table 3: Electrical Characteristics (Tamb = 25°C)
Symbol
Parameter
I
VBR Breakdown voltage
IF
IRM Leakage current
VRM Stand-off voltage
VCL Clamping voltage
VF
VCL VBR VRM
IRM
V
Rd Dynamic impedance
IPP Peak pulse current
C Capacitance
Slope: 1/Rd
IPP
VBR
IR
IRM
VRM VCL
IPP (1)
VF (2)
αT
C
min. max.
Part Number
max.
max.
max.
max. typ.
IF = 850mA
VR=0V
V
V
mA µA
V
V
A
V
10-4/°C pF
ESDA18-1F2 16
18
1
0.5
10
20
1
1.3
8.5 230
(1) 8 / 20 µs pulse waveform.
(2) DC current not recommended for more than 5 sec. Even if Transil failure mode is short circuit the bumps could exceed melting temper-
ature and the component disassembled from the board.
2/7
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