DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STM8S207M6T3BTR View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STM8S207M6T3BTR Datasheet PDF : 103 Pages
First Prev 71 72 73 74 75 76 77 78 79 80 Next Last
Electrical characteristics
STM8S207xx, STM8S208xx
Figure 34. Typical NRST pull-up resistance vs VDD @ 4 temperatures
-40ËšC
60
25ËšC
85ËšC
55
125ËšC
50
45
40
35
30
2.5
3
3.5
4
4.5
5
5.5
6
VDD [V]
Figure 35. Typical NRST pull-up current vs VDD @ 4 temperatures
140
120
100
80
60
-40ËšC
25ËšC
40
85ËšC
20
125ËšC
0
0
1
2
3
4
5
6
VDD [V]
ai15069
The reset network shown in Figure 36 protects the device against parasitic resets. The user
must ensure that the level on the NRST pin can go below the VIL max. level specified in
Table 41. Otherwise the reset is not taken into account internally. For power consumption
sensitive applications, the capacity of the external reset capacitor can be reduced to limit
charge/discharge current. If the NRSTsignal is used to reset the external circuitry, care must
be taken of the charge/discharge time of the external capacitor to fulfill the external device’s
reset timing conditions. The minimum recommended capacity is 10 nF.
Figure 36. Recommended reset pin protection
VDD
STM8
External
reset
circuit
(optional)
0.1µF
NRST
RPU
Filter
Internal reset
76/103
Doc ID 14733 Rev 12

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]