STPS15L25D View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STPS15L25D

LOW DROP POWER SCHOTTKY RECTIFIER

STMicroelectronics 

STPS15L25D/G

THERMAL RESISTANCES

Symbol

Parameter

Rth(j-c) Junction to case

STATIC ELECTRICAL CHARACTERISTICS

Value

1

Unit

°C/W

Symbol

Parameters

Test conditions

Min. Typ. Max. Unit

IR *

Reverse leakage current

Tj = 25°C VR =

VRRM

Tj = 125°C

1.3 mA

225 450 mA

VF * Forward voltage drop

Tj = 25°C IF = 15A

0.46 V

Tj = 125°C IF = 15A

0.3 0.35

Tj = 25°C IF = 30A

0.56

Tj = 125°C IF = 30A

0.41 0.46

Pulse test : * tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses use the following equation :

P = 0.24 x IF(AV) + 0.0073 IF2(RMS)

Fig. 1: Average forward power dissipation versus

average forward current.

Fig. 2: Average forward current versus ambient

temperature ( δ = 0.5).

PF(av)(W)

8

7

6

5

4

3

2

δ = 0.1

δ = 0.05

δ = 0.2

δ = 0.5

δ=1

T

IF(av)(A)

16

14

12

10

8

6

4

T

Rth(j-a)=Rth(j-c)

Rth(j-a)=50°C/W

1

IF(av) (A)

δ=tp/T

tp

0

0

2

4

6

8 10 12 14 16

2

δ=tp/T

tp

Tamb(°C)

0

0

25

50

75

100

125

150

Fig. 3: Normalized avalanche power derating

versus pulse duration.

Fig. 4: Normalized avalanche power derating

versus junction temperature.

PARM(tp)

PARM(1µs)

1

0.1

0.01

0.001

0.01

0.1

tp(µs)

1

10

PARM(tp)

PARM(25°C)

1.2

1

0.8

0.6

0.4

0.2

0

100

1000

0

Tj(°C)

25

50

75

100

125

150

2/5

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