STD155N3H6 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STD155N3H6

N-channel 30 V, 2.5 mΩ , 80 A, D²PAK, DPAK STripFET™ VI DeepGATE™ Power MOSFET

STMicroelectronics 

STB155N3H6, STD155N3H6

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

VGS

ID (1)

ID

IDM (2)

PTOT

Drain-source voltage (VGS = 0)

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Derating factor

Tstg Storage temperature

Tj

Operating junction temperature

1. Limited by wire bonding

2. Pulse width limited by safe operating area

Table 3. Thermal resistance

Symbol

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-pcb (1) Thermal resistance junction-pcb max

1. When mounted on 1 inch² 2 oz Cu board

Table 4. Avalanche characteristics

Symbol

Parameters

IAV Not-repetitive avalanche current

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAV, VDD = 22 V)

Electrical ratings

Value

30

± 20

80

80

320

110

0.73

-55 to 175

Unit

V

V

A

A

A

W

W/°C

°C

°C

Value

D²PAK DPAK

1.36

35

50

Unit

°C/W

°C/W

Value

Unit

40

A

525

mJ

Doc ID 018793 Rev 2

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