STD155N3H6 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STD155N3H6

N-channel 30 V, 2.5 mΩ , 80 A, D²PAK, DPAK STripFET™ VI DeepGATE™ Power MOSFET

STMicroelectronics 

STB155N3H6, STD155N3H6

Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

VGS

(V)

12

VDD=15V

ID=8A

AM09154v1

C

(pF)

10

AM09155v1

Ciss

8

1000

6

Coss

4

2

0

0 10 20 30 40 50 60 70 Qg(nC)

Crss

100

0

5 10 15 20 25 VDS(V)

Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs

vs temperature

temperature

VGS(th)

(norm)

1.2

1.0

ID=250µA

AM09156v1

RDS(on)

(norm)

1.8

1.6

1.4

VGS=10V

ID=40A

AM09157v1

0.8

1.2

1.0

0.6

0.8

0.4

0.2

0

-75 -25 25 75 125 175 TJ(°C)

0.6

0.4

0.2

0

-75 -25

25 75 125 175 TJ(°C)

Figure 12. Source-drain diode forward

characteristics

VSD

(V)

1.0

TJ=-55°C

AM09158v1

0.9

TJ=25°C

0.8

0.7

0.6

0.5

0.4

0

TJ=175°C

20

40

60

80

ISD(A)

Doc ID 018793 Rev 2

7/

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