60N3LLH5 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
60N3LLH5 Datasheet PDF : 12 Pages
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Electrical characteristics
2
Electrical characteristics
STL60N3LLH5
(TCASE = 25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
30
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = max rating,
VDS = max rating @125 °C
1
µA
10 µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ± 22 V
±100 nA
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250 µA
1
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 8.5 A
VGS= 4.5 V, ID= 8.5 A
0.0063 0.0071 Ω
0.0086 0.0095 Ω
Table 6.
Symbol
Dynamic
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
VDS =25 V, f=1 MHz,
VGS=0
VDD=15 V, ID = 17 A
VGS =4.5 V
(see Figure 14)
Min. Typ. Max. Unit
1290
pF
- 240
-
pF
32
pF
8
nC
- 3.6
-
nC
3.4
nC
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD=15 V, ID= 8.5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 13)
Min. Typ. Max. Unit
8.6
ns
11.2
ns
-
-
32.4
ns
6
ns
4/12
Doc ID 17268 Rev 1
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