60N3LLH5 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
60N3LLH5 Datasheet PDF : 12 Pages
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STL60N3LLH5
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD = 17 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A,
di/dt = 100 A/µs,
VDD=25 V, Tj=150 °C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration= 300 µs, duty cycle 1.5%
Min Typ. Max Unit
-
17 A
-
68 A
-
1.1 V
22
ns
-
15
nC
1.4
A
Doc ID 17268 Rev 1
5/12
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