DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STM32F091VB View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STM32F091VB Datasheet PDF : 128 Pages
First Prev 71 72 73 74 75 76 77 78 79 80 Next Last
STM32F091xB STM32F091xC
Electrical characteristics
Low-speed internal (LSI) RC oscillator
Table 44. LSI oscillator characteristics(1)
Symbol
Parameter
Min
Typ
fLSI
Frequency
30
tsu(LSI)(2) LSI oscillator startup time
-
IDDA(LSI)(2) LSI oscillator power consumption
-
1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
2. Guaranteed by design, not tested in production.
40
-
0.75
Max
50
85
1.2
Unit
kHz
µs
µA
6.3.9
PLL characteristics
The parameters given in Table 45 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 24: General operating
conditions.
Table 45. PLL characteristics
Symbol
Parameter
Value
Unit
Min
Typ
Max
fPLL_IN
PLL input clock(1)
PLL input clock duty cycle
1(2)
8.0
40(2)
-
24(2)
60(2)
MHz
%
fPLL_OUT
tLOCK
JitterPLL
PLL multiplier output clock
PLL lock time
Cycle-to-cycle jitter
16(2)
-
-
-
-
-
48
200(2)
300(2)
MHz
µs
ps
1. Take care to use the appropriate multiplier factors to obtain PLL input clock values compatible with the
range defined by fPLL_OUT.
2. Guaranteed by design, not tested in production.
6.3.10
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
Table 46. Flash memory characteristics
Symbol
Parameter
Conditions
Min
tprog 16-bit programming time TA = - 40 to +105 °C
40
tERASE Page (2 KB) erase time TA = - 40 to +105 °C
20
tME Mass erase time
TA = - 40 to +105 °C
20
Write mode
-
IDD Supply current
Erase mode
-
1. Guaranteed by design, not tested in production.
Typ Max(1) Unit
53.5 60
µs
-
40
ms
-
40
ms
-
10 mA
-
12 mA
DocID026284 Rev 4
75/128
99

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]