STM32F373VBT7(2013) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STM32F373VBT7
(Rev.:2013)

ARM Cortex-M4 32b MCU+FPU, up to 256KB Flash+32KB SRAM timers, 4 ADCs (12/16-bit), 3 DACs, 2 comp., 2.0-3.6 V operation

STMicroelectronics 

Electrical characteristics

STM32F37xxx

1. Data based on characterization results, not tested in production.

2. For fADC lower than 5 MHz, there will be a performance degradation of around 2 dB due to flicker noise increase.

3. If the reference value is lower than 2.4 V, there will be a performance degradation proportional to the reference supply drop,

according to this formula: 20*log10(VREF/2.4) dB

4. SNR, THD, SINAD parameters are valid for frequency bandwidth 20Hz - 1kHz. Input signal frequency is 300Hz (for

fADC=6MHz) and 100Hz (for fADC=1.5MHz).

Symbol

Parameter

Table 75. VREFSD+ pin characteristics(1)

Conditions

Min Typ Max Unit

Note

Buffered embedded

reference voltage (1.2 V)

-

1.2

-

VREFINT

Internal reference

voltage

Embedded reference

voltage amplified by

- 1.8 -

factor 1.5

See Section 6.3.4:

V

Embedded

reference voltage on

page 60

V

CVREFSD+(2)

Reference voltage

filtering capacitor

VREFSD+ = VREFINT

1000

10000 nF

RVREFSD+

Reference voltage

input impedance

Fast mode

(fADC = 6 MHz)

Slow mode

(fADC = 1.5 MHz)

- 238 -

- 952 -

See RM0313

kΩ reference manual for

detailed description

1. Data based on characterization results, not tested in production.

2. If internal reference voltage is selected then this capacitor is charged through internal resistance - typ. 300 ohm. If internal

reference source is selected through the reference voltage selection bits (REFV<>”00” in SDADC_CR1 register), the

application must first configure REFV bits and then wait for capacitor charging. Recommended waiting time is 3 ms if 1 µF

capacitor is used.

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DocID022691 Rev 4

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