STM32F373RBT7(2013) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STM32F373RBT7
(Rev.:2013)

ARM Cortex-M4 32b MCU+FPU, up to 256KB Flash+32KB SRAM timers, 4 ADCs (12/16-bit), 3 DACs, 2 comp., 2.0-3.6 V operation

STMicroelectronics 

Electrical characteristics

STM32F37xxx

All timings are derived from tests performed under ambient temperature and VDD supply

voltage conditions summarized in Table 22.

Symbol

Table 37. Low-power mode wakeup timings

Parameter

Conditions

Typ @VDD = VDDA

Max Unit

= 2.0 V = 2.4 V = 2.7 V = 3 V = 3.3 V

tWUSTOP

Regulator in run mode 4.1

Wakeup from Stop

mode

Regulator in low

power mode

7.9

tWUSTANDB Wakeup from

Y

Standby mode

LSI and IWDG off

62.6

tWUSLEEP

Wakeup from Sleep

mode

After WFE instruction

3.9

6.7

53.7

3.8 3.7

6.1 5.7

49.2 45.7

6

3.6 4.5

5.4 8.6 µs

42.7 100

CPU

clock

cycles

6.3.7

External clock source characteristics

High-speed external user clock generated from an external source

In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO.

The external clock signal has to respect the I/O characteristics in Section 6.3.14. However,

the recommended clock input waveform is shown in Figure 12.

Symbol

Table 38. High-speed external user clock characteristics

Parameter(1)

Conditions

Min Typ Max Unit

fHSE_ext

User external clock source

frequency

CSS is on or

PLL is used

1

8

CSS is off,

PLL not used

0

VHSEH OSC_IN input pin high level voltage

VHSEL OSC_IN input pin low level voltage

tw(HSEH)

tw(HSEL)

OSC_IN high or low time

tr(HSE)

tf(HSE)

OSC_IN rise or fall time

0.7 VDD

VSS

15

-

-

-

1. Guaranteed by design, not tested in production.

32 MHz

VDD

V

0.3 VDD

-

ns

20

72/131

DocID022691 Rev 4

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