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ST10F276-4TR3 View Datasheet(PDF) - STMicroelectronics

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Description
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ST10F276-4TR3 Datasheet PDF : 235 Pages
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Internal Flash memory
ST10F276E
Table 13. Flash data register 1 low
Bit
Function
DIN(15:0)
Data Input 15:0
These bits must be written with the Data to program the Flash with the following
operations: Word Program (32-bit), Double Word Program (64-bit) and Set Protection.
4.3.8
Flash data register 1 high
FDR1H (0x0E 000E)
FCR
Reset value: FFFFh
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
DIN31 DIN30 DIN29 DIN28 DIN27 DIN26 DIN25 DIN24 DIN23 DIN22 DIN21 DIN20 DIN19 DIN18 DIN17 DIN16
RW RW RW RW RW RW RW RW RW RW RW RW RW RW RW RW
Table 14. Flash data register 1 high
Bit
Function
Data input 31:16
DIN(31:16) These bits must be written with the data to program the Flash with the following
operations: word program (32-bit), double word program (64-bit) and set protection.
4.3.9
Flash address register low
FARL (0x0E 0010)
FCR
Reset value: 0000h
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
ADD15 ADD14 ADD13 ADD12 ADD11 ADD10 ADD9 ADD8 ADD7 ADD6 ADD5 ADD4 ADD3 ADD2 Reserved
RW RW RW RW RW RW RW RW RW RW RW RW RW RW
Table 15. Flash address register low
Bit
Function
ADD(15:2)
Address 15:2
These bits must be written with the address of the Flash location to program in the
following operations: word program (32-bit) and double word program (64-bit). In
double word program bit ADD2 must be written to ‘0’.
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Doc ID 12303 Rev 3

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