STP3N150 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP3N150
STMicroelectronics
STP3N150 Datasheet PDF : 15 Pages
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STFW3N150
STP3N150, STW3N150
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PF
Features
Type
VDSS
STFW3N150
STP3N150
STW3N150
1500 V
1500 V
1500 V
RDS(on)
max.
<9Ω
<9Ω
<9Ω
ID PTOT
2.5 A 63 W
2.5 A 140 W
2.5 A 140 W
■ 100% avalanche tested
■ Intrinsic capacitances and Qg minimized
■ High speed switching
■ Fully isolated TO-3PF plastic package
■ Creepage distance path is 5.4 mm (typ.) for
TO-3PF
Application
Switching applications
Description
Using the well consolidated high voltage MESH
OVERLAYTM process, STMicroelectronics has
designed an advanced family of very high voltage
Power MOSFETs with outstanding performances.
The strengthened layout coupled with the
company’s proprietary edge termination structure,
gives the lowest RDS(on) per area, unrivalled gate
charge and switching characteristics.
3
2
1
TO-220
3
2
1
TO-247
3
2
1
TO-3PF
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STFW3N150
STP3N150
STW3N150
Marking
3N150
3N150
3N150
Package
TO-3PF
TO-220
TO-247
June 2010
Doc ID 13102 Rev 9
Packaging
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