STP3N150 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP3N150
STMicroelectronics
STP3N150 Datasheet PDF : 15 Pages
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Electrical characteristics
2
Electrical characteristics
STFW3N150, STP3N150, STW3N150
(Tcase = 25 °C unless otherwise specified)
Table 5.
Symbol
On /off states
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 30 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on
resistance
VGS = 10 V, ID = 1.3 A
Min. Typ. Max. Unit
1500
3
V
10 µA
500 µA
± 100 nA
4
5
V
6
9Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Forward
transconductance
VDS = 30 V, ID = 1.3 A
-
2.6
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz, VGS = 0 -
939
102
13.2
pF
- pF
pF
Coss eq. (2) Equivalent output
capacitance
VDS=0 to 1200 V, VGS = 0
-
100
- pF
f=1 MHz Gate DC Bias=0
Rg
Gate input resistance Test signal level=20 mV
open drain
-
4
-
Ω
Qg
Total gate charge
VDD = 1200 V, ID = 2.5 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 19)
29.3
nC
-
4.6
- nC
17
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/15
Doc ID 13102 Rev 9
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