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ST72324BLJ2B5 View Datasheet(PDF) - STMicroelectronics

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Description
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ST72324BLJ2B5 Datasheet PDF : 154 Pages
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ST72324Lxx
12.6 MEMORY CHARACTERISTICS
12.6.1 RAM and Hardware Registers
Symbol
Parameter
VRM
Data retention mode 1)
Conditions
Min
Typ
Max
Unit
HALT mode (or RESET)
1.6
V
12.6.2 FLASH Memory
DUAL VOLTAGE HDFLASH MEMORY
Symbol
Parameter
Conditions
Min 2)
Typ
Max 2) Unit
fCPU
VPP
IDD
IPP
Operating frequency
Programming voltage 3)
Supply current4)
VPP current4)
Read mode
Write / Erase mode
2.85V VDD 3.6V
Write / Erase
Read (VPP=12V)
Write / Erase
0
1
11.4
<10
8
MHz
8
12.6
V
µA
200
µA
30
mA
tVPP
tRET
NRW
TPROG
TERASE
Internal VPP stabilization time
Data retention
Write erase cycles
Programming or erasing tempera-
ture range
TA=85°C
TA=25°C
10
40
100
-40
25
µs
years
cycles
85
°C
Notes:
1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg-
isters (only in HALT mode). Not tested in production.
2. Data based on characterization results, not tested in production.
3. VPP must be applied only during the programming or erasing operation and not permanently for reliability reasons.
4. Data based on simulation results, not tested in production.
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