STGD7NB60H View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STGD7NB60H Datasheet PDF : 9 Pages
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STGD7NB60H
N-CHANNEL 7A - 600V - DPAK
PowerMESH™ IGBT
TYPE
VCES
VCE(sat)
IC
STD7NB60H
600 V < 2.8 V
7A
s HIGH INPUT IMPEDANCE
s LOW ON-VOLTAGE DROP (Vcesat)
s OFF LOSSES INCLUDE TAIL CURRENT
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s VERY HIGH FREQUENCY OPERATION
s CO-PACKAGED WITH TURBOSWITCHT
s TYPICAL SHORT CIRCUIT WITHSTAND TIME
5MICROS S-family, 4 micro H family
s ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH™ IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high
frequency applications (up to 50kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.
APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS
s SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
3
1
DPAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCES
Collector-Emitter Voltage (VGS = 0)
VECR
Emitter-Collector Voltage
VGE
Gate-Emitter Voltage
IC
Collector Current (continuos) at TC = 25°C
IC
Collector Current (continuos) at TC = 100°C
ICM (s) Collector Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
July 2000
Value
600
20
± 20
14
7
56
55
0.44
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
°C
°C
1/9
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