STGD7NB60H View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STGD7NB60H Datasheet PDF : 9 Pages
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STGD7NB60H
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Rthc-sink Thermal Resistance Case-sink Typ
2.27
°C/W
100
°C/W
1.5
°C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
VBR(CES) Collectro-Emitter Breakdown IC = 250 µA, VGE = 0
600
V
Voltage
ICES
Collector cut-off
(VGE = 0)
VCE = Max Rating, TC = 25 °C
VCE = Max Rating, TC = 125 °C
10
µA
100
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20V , VCE = 0
±100
nA
ON (1)
Symbol
VGE(th)
VCE(sat)
Parameter
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
Test Conditions
VCE = VGE, IC = 250µA
VGE = 15V, IC = 7 A
VGE = 15V, IC = 7 A, Tj =125°C
Min.
3
Typ.
2.3
1.9
Max.
5
2.8
Unit
V
V
V
DYNAMIC
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
ICL
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Latching Current
Test Conditions
VCE = 25 V , IC =3 A
VCE = 25V, f = 1 MHz, VGE = 0
Min.
3.5
VCE = 480V, IC = 7 A,
VGE = 15V
Vclamp = 480 V , Tj = 150°C
28
RG = 10 Ω
Typ.
5
560
68
15
42
7.9
17.6
Max.
55
Unit
S
pF
pF
pF
nC
nC
nC
A
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
(di/dt)on
Eon
Turn-on Current Slope
Turn-on Switching Losses
Test Conditions
VCC = 480 V, IC = 7 A
RG = 10Ω , VGE = 15 V
VCC= 480 V, IC = 7 A RG=10Ω
VGE = 15 V,Tj = 125°C
Min.
Typ.
15
48
160
70
Max.
Unit
ns
ns
A/µs
µJ
2/9
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