STPS61170C_05 View Datasheet(PDF) - STMicroelectronics
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Description
Manufacturer
STPS61170C_05 Datasheet PDF : 5 Pages
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STPS61170C
Table 4: Thermal Parameters
Symbol
Rth(j-c) Junction to case
Parameter
Rth(c)
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Per diode
Total
Coupling
Value
0.9
0.6
0.3
Unit
°C/W
Table 5: Static Electrical Characteristics (per diode)
Symbol
IR *
VF **
Parameter
Reverse leakage current
Forward voltage drop
Tests conditions
Tj = 25 °C
Tj = 125 °C
VR = VRRM
Tj = 25 °C IF = 30 A
Tj = 125 °C IF = 30 A
Tj = 25 °C IF = 60 A
Tj = 125 °C IF = 60 A
Min.
Typ
16
0.63
0.76
Max.
60
60
0.84
0.67
0.92
0.80
Unit
µA
mA
V
Pulse test:
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.54 x IF(AV) + 0.0043 IF2(RMS)
Figure 1: Average forward power dissipation Figure 2: Average forward current versus
versus average forward current (per diode)
ambient temperature (δ = 0.5, per diode)
PF(AV)(W)
30
25
d=0.05
d=0.1
d=0.2
d=0.5
d=1
IF(AV)(A)
35
30
Rth(j-a)=Rth(j-c)
20
15
10
5
0
0
T
IF(AV)(A)
d=tp/T
tp
5
10
15
20
25
30
35
40
25
20
15
Rth(j-a)=15°C/W
10
T
5
d=tp/T
0
0
25
tp
50
Tamb(°C)
75
100
125
150
175
Figure 3: Normalized avalanche power
derating versus pulse duration
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
100
1000
Figure 4: Normalized avalanche power
derating versus junction temperature
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
25
50
Tj(°C)
75
100
125
150
2/5
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