STD4NB40(1998) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STD4NB40 Datasheet PDF : 7 Pages
| |||
STD4NB40
TYPE
STD4NB40
N - CHANNEL ENHANCEMENT MODE
PowerMESH™ MOSFET
PRELIMINARY DATA
V DSS
400 V
RDS(on)
< 1.8 Ω
ID
3.7 A
s TYPICAL RDS(on) = 1.47 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
3
2
1
3
1
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
IPAK
TO-251
(Suffix ”-1”)
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM ( •)
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
February 1998
Value
Uni t
400
V
400
V
± 30
V
3.7
A
2.3
A
14.8
A
50
W
0.4
W/oC
4.5
-65 to 150
150
(1) ISD ≤3.7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ ns
oC
oC
1/6
Share Link: 