FQA70N15 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQA70N15 Datasheet PDF : 9 Pages
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FQA70N15
N-Channel QFET® MOSFET
150 V, 70 A, 28 mΩ
June 2014
Description
This N-Channel enhancement mode power MOSFET
is produced using Fairchild Semiconductor’s
proprietary planar stripe and DMOS technology. This
advanced MOSFET technology has been especially
tailored to reduce on-state resistance, and to provide
superior switching performance and high avalanche
energy strength. These devices are suitable for switched
mode power supplies, audio amplifier, DC motor control,
and variable switching power applications.
Features
• 70 A, 100 V, RDS(on) = 28 mΩ (Max)@VGS = 10 V, ID = 35 A
• Low Gate Charge (Typ. 135 nC)
• Low Crss (Typ.135 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
D
G
DS
TO-3PN
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Curent - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
©2000 Fairchild Semiconductor Corporation
1
FQA70N15 Rev. C2
FQA70N15
150
70
50
280
± 25
1000
70
33
6.0
330
2.2
-55 to +175
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FQA70N15
0.45
40
Unit
°C/W
°C/W
www.fairchildsemi.com
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