FQA70N15 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQA70N15 Datasheet PDF : 9 Pages
| |||
Package Marking and Ordering Information
Device Marking
FQA70N15
Device
FQA70N15
Package
TO-3PN
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
150 --
ΔBVDSS Breakdown Voltage Temperature
/ ΔTJ Coefficient
ID = 250 μA, Referenced to 25°C -- 0.15
IDSS
Zero Gate Voltage Drain Current
VDS = 150 V, VGS = 0 V
VDS = 120 V, TC = 150°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V
--
--
--
--
1
10
100
-100
V
V/°C
μA
μA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS , ID = 250 μA
VGS = 10 V, ID = 35 A
VDS = 40 V, ID = 35 A
2.0 --
4.0
V
-- 0.023 0.028 Ω
--
48
--
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 4150 5400 pF
-- 840 1100 pF
-- 135 175
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 75 V, ID = 70 A,
RG = 25 Ω
--
60 130
ns
-- 420 850
ns
-- 340 690
ns
(Note 4)
--
290
590
ns
VDS = 120 V, ID = 70 A,
-- 135 175
nC
VGS = 10 V
--
25
--
nC
(Note 4)
--
65
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 70 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 70 A,
dIF / dt = 100 A/μs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.34mH, IAS = 70A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 70A, di/dt ≤ 300A/μs, VDD = BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
--
--
70
A
--
--
280
A
--
--
1.5
V
-- 150
--
ns
-- 0.67
--
μC
©2000 Fairchild Semiconductor Corporation
2
FQA70N15 Rev. C2
www.fairchildsemi.com
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