STPS0520M View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS0520M Datasheet PDF : 6 Pages
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STPS0520M
Figure 3: Normalized avalanche power
derating versus pulse duration
Figure 4: Normalized avalanche power
derating versus junction temperature
PARM(tp)
PARM(1µs)
1
PARM(tp)
PARM(25°C)
1.2
1
0.1
0.8
0.6
0.01
0.4
0.2
0.001
) 0.01
0.1
tp(µs)
1
10
100
1000
0
25
Tj(°C)
50
75
100
125
150
uct(s Figure 5: Non repetitive surge peak forward
d current versus overload duration (maximum
ro ) values)
P t(s IM(A)
te c 16
le u 15
d 14
13
so ro 12
11
b P 10
9
- O te 8
7
) le 6
5
t(s o 4
s 3 IM
c b 2
1
u O 0
t
δ=0.5
d - 1.E-03
t(s)
1.E-02
1.E-01
TC=25°C
TC=75°C
TC=125°C
1.E+00
Figure 6: Relative variation of thermal
impedance junction to ambient versus pulse
duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3
δ = 0.2
0.2
δ = 0.1
0.1 Single pulse
0.0
1.E-04
1.E-03
tp(s)
T
1.E-02
δ=tp/T
tp
1.E-01
Pro t(s) Figure 7: Reverse leakage current versus
te c reverse voltage applied (typical values)
le du IR(mA)
so ro 1.E+02
Tj=150°C
b P 1.E+01
Tj=125°C
O lete 1.E+00
so 1.E-01
Tj=100°C
Tj=75°C
Tj=50°C
Ob1.E-02
Tj=25°C
Figure 8: Reverse leakage current versus
junction temperature (typical values)
IR(mA)
1.E+02
VR=20V
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
VR(V)
0
2
4
6
8 10 12 14 16 18 20
1.E-03
0
Tj(°C)
25
50
75
100
125
150
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