Electrical characteristics
STM32F302xx/STM32F303xx
6.3.4
Table 25. Programmable voltage detector characteristics
Symbol
Parameter
Conditions
Min(1) Typ Max(1) Unit
VPVD0
PVD threshold 0
VPVD1
PVD threshold 1
VPVD2
PVD threshold 2
Rising edge
Falling edge
Rising edge
Falling edge
Rising edge
Falling edge
2.1 2.18 2.26
2 2.08 2.16
2.19 2.28 2.37
2.09 2.18 2.27
2.28 2.38 2.48
2.18 2.28 2.38
VPVD3
PVD threshold 3
VPVD4
PVD threshold 4
Rising edge
Falling edge
Rising edge
Falling edge
2.38 2.48 2.58
2.28 2.38 2.48
V
2.47 2.58 2.69
2.37 2.48 2.59
VPVD5
PVD threshold 5
VPVD6
PVD threshold 6
Rising edge
Falling edge
Rising edge
Falling edge
2.57 2.68 2.79
2.47 2.58 2.69
2.66 2.78 2.9
2.56 2.68 2.8
VPVD7
PVD threshold 7
VPVDhyst(2)
IDD(PVD)
PVD hysteresis
PVD current
consumption
Rising edge
Falling edge
2.76 2.88 3
2.66 2.78 2.9
-
100
-
mV
-
0.15 0.26 µA
1. Data based on characterization results only, not tested in production.
2. Guaranteed by design, not tested in production.
Embedded reference voltage
The parameters given in Table 26 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 22.
Table 26. Embedded internal reference voltage
Symbol
Parameter
Conditions
Min Typ Max Unit
VREFINT
TS_vrefint
VRERINT
TCoeff
–40 °C < TA < +105 °C 1.16
Internal reference voltage
–40 °C < TA < +85 °C 1.16
ADC sampling time when
reading the internal
2.2
reference voltage
Internal reference voltage
spread over the
temperature range
VDD = 3 V ±10 mV
-
Temperature coefficient
-
1.2 1.25
V
1.2 1.24(1) V
-
-
µs
-
10(2)
mV
- 100(2) ppm/°C
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