STPS1L30 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS1L30 Datasheet PDF : 12 Pages
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STPS1L30
Characteristics
1
Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
IF(AV) Average forward current, δ = 0.5, square wave
SMA
SMB
TL = 135 °C
TL = 140 °C
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
PARM Repetitive peak avalanche power
tp = 10 µs, Tj = 125 °C
Tstg Storage temperature range
Tj
Maximum operating junction temperature(1)
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Value
Unit
30
V
10
A
1
A
75
A
110
W
-65 to +150 °C
+150
°C
Symbol
Rth(j-l)
Table 2. Thermal resistance parameter
Parameter
Junction to lead
SMA
SMB
Max. value
30
25
Unit
°C/W
For more information, please refer to the following application note :
• AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics
Symbol
Parameter
IR(1)
Reverse leakage current
VF(1)
Forward voltage drop
1. Pulse test: tp = 380 µs, δ < 2%
Test conditions
Tj = 25 °C
Tj = 100 °C
VR = VRRM
Tj = 25 °C
Tj = 125 °C
IF = 1 A
Tj = 25 °C
Tj = 125 °C
IF = 2 A
Min. Typ.
Max. Unit
-
200
µA
-
6
15
mA
-
0.395
-
0.260 0.300
V
-
0.445
-
0.325 0.375
To evaluate the conduction losses, use the following equation:
P = 0.225x IF(AV) + 0.075 x IF2(RMS)
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode
DS1243 - Rev 7
page 2/12
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