STPS1L30 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS1L30 Datasheet PDF : 12 Pages
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STPS1L30
Characteristics (curves)
Figure 5. Relative variation of thermal impedance junction
to ambient versus pulse duration (SMA)
Zth(j-a)/ Rth(j-a)
1.00
SMA
Figure 6. Reverse leakage current versus reverse voltage
applied (typical values)
IR(mA)
1.E+2
1.E+1
1.E+0
T j=150°C
T j=125°C
T j=100°C
0.10
1.E-1
Single pulse
0.01
1.E-03
1.E-02
1.E-01
tp(s)
1.E+00
1.E+01
1.E+02
1.E+03
1.E-2
T j=25°C
1.E-3
VR (V)
0
5
10
15
20
25
30
Figure 7. Junction capacitance versus reverse voltage
applied (typical values)
C(pF)
500
F=1MHz
VOSC=30mVRMS
Tj=25°C
100
Figure 8. Forward voltage drop versus forward current
(typical values, high level)
IF(A)
10.00
Tj=150°C
1.00
Tj=100°C
Tj=25°C
10
VR(V)
VF(V)
0.10
1
2
5
10
20
50
0.0
0.1 0.2
0.3 0.4
0.5 0.6
0.7
Figure 9. Forward voltage drop versus forward current
(maximum values, low level)
IF(A)
3.0
2.5
Tj =150°C
2.0
Tj=125°C
1.5
1.0
Tj=100°C
Tj=25°C
0.5
VF(V)
0.0
0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60
Figure 10. Thermal resistance junction to ambient versus
copper surface under each lead (SMB)
Rth(j-a) (°C/W)
200
Epoxy p ri nted ci rcui t board FR4, coppe r t hi ckness: 35 µm
150
SMB
100
50
S(Cu)(cm²)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
DS1243 - Rev 7
page 4/12
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