2N6271 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2N6271 Datasheet PDF : 2 Pages
| |||
, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N6271
DESCRIPTION
• High Collector-Emitter Sustaining Voltage-
: VCEo(sus)= 10OV(Min)
• High Current Capability
• Wide Area of Safe Operation
APPLICATIONS
• Designed for use in audio amplifier and switching circuits
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base voltage
7
V
Ic
Collector Current-Continuous
30
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
10
A
150
W
150
'C
-65-150
°c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance.Junction to Case 0.875 r/w
3
PIN
1.BASE
2. EMITTER
3. COLLECT OR (CASE)
2
TO-3 package
,r
\, C
t-E
LI
1
—tk-D .(PL
;LK
K—U-*
v_
{*-!_-*
-rail
5 \ / ^
c
M t ^V
j
^ -9H^
t
B
\y Semi-Conductors
intii
CUM MW MAX
A
3900
B 25.30 26.67
C
7.80 8.30
0 0.90
10
E
1.40 1.60
5
1092
H
546
K 11.40 1350
L 1675 17.05 j
H 19.40 1962
Q
4.00 420
u 30.00 3020
V
430 450
Share Link: 