2N6271 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2N6271 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc=100mA;lB=0
VcE(sat) Collector-Emitter Saturation Voltage lc= 7.5A; IB= 0.75A
VBE(sat) Base-Emitter Saturation Voltage
lc= 7.5A; IB= 0.75A
ICEO
Collector Cutoff Current
VCE= 50V; IB=0
ICBO
Collector Cutoff Current
VcE=RatedVcE; VBE(off)=1-5V
IEBO
Emitter Cutoff Current
VEB= 7V; lc=0
hF£
DC Current Gain
lc=15A;VCE=4V
ft
Current-Gain—Bandwidth Product
lc=1A;VC£=10V
2N6271
MIN TYP. MAX UNIT
100
V
1.0
V
1.3
V
5.0 mA
1.0 mA
1.0 mA
20
100
75
MHz
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