M29W641DL12N6T View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
M29W641DL12N6T Datasheet PDF : 42 Pages
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M29W641DH, M29W641DL, M29W641DU
Table 20. CFI Query System Interface Information
Address
Data
Description
VCC Logic Supply Minimum Program/Erase voltage
1Bh
0027h
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
VCC Logic Supply Maximum Program/Erase voltage
1Ch
0036h
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
VPP [Programming] Supply Minimum Program/Erase voltage
1Dh
00B5h
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
VPP [Programming] Supply Maximum Program/Erase voltage
1Eh
00C5h
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
1Fh
0004h Typical timeout per single word program = 2n µs
20h
0000h Typical timeout for minimum size write buffer program = 2n µs
21h
000Ah Typical timeout per individual block erase = 2n ms
22h
0000h Typical timeout for full chip erase = 2n ms
23h
0004h Maximum timeout for word program = 2n times typical
24h
0000h Maximum timeout for write buffer program = 2n times typical
25h
0003h Maximum timeout per individual block erase = 2n times typical
26h
0000h Maximum timeout for chip erase = 2n times typical
Table 21. Device Geometry Definition
Address
Data
Description
27h
0017h Device Size = 2n in number of bytes
28h
29h
0001h
0000h
Flash Device Interface Code description
2Ah
2Bh
0000h
0000h
Maximum number of bytes in multi-byte program or page = 2n
2Ch
0001h
Number of Erase Block Regions. It specifies the number of
regions containing contiguous Erase Blocks of the same size.
2Dh
007Fh Region 1 Information
2Eh
0000h Number of identical size erase block = 007Fh+1
2Fh
0000h Region 1 Information
30h
0001h Block size in Region 1 = 0100h * 256 byte
Value
2.7V
3.6V
11.5V
12.5V
16µs
NA
1s
NA
256 µs
NA
8s
NA
Value
8 MByte
x16
Async.
NA
1
128
64 KByte
33/42
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