BUV298AV View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

BUV298AV

NPN TRANSISTOR POWER MODULE

STMicroelectronics 

®

BUV298AV

NPN TRANSISTOR POWER MODULE

s HIGH CURRENT POWER BIPOLAR MODULE

s VERY LOW Rth JUNCTION CASE

s SPECIFIED ACCIDENTAL OVERLOAD

AREAS

s INSULATED CASE (2500V RMS)

s EASY TO MOUNT

s LOW INTERNAL PARASITIC INDUCTANCE

INDUSTRIAL APPLICATIONS:

s MOTOR CONTROL

s SMPS & UPS

s WELDING EQUIPMENT

Pin 4 not connected

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VCEV Collector-Emitter Voltage (VBE = -5 V)

VCEO(sus) Collector-Emitter Voltage (IB = 0)

VEBO Emitter-Base Voltage (IC = 0)

IC

Collector Current

ICM Collector Peak Current (tp = 10 ms)

IB

Base Current

IBM Base Peak Current (tp = 10 ms)

Ptot Total Dissipation at TC = 25 oC

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

VISO Insulation Withstand Voltage (AC-RMS)

October 2001

Value

1000

450

7

50

75

10

16

250

-55 to 150

150

2500

Unit

V

V

V

A

A

A

A

W

oC

oC

oC

1/7

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