BUV298AV View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
BUV298AV Datasheet PDF : 7 Pages
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BUV298AV
THERMAL DATA
Rthj-case
Rthc-h
Thermal Resistance Junction-case
Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
0.5
0.05
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICER
ICEV
Collector Cut-off
Current (RBE = 5 Ω)
Collector Cut-off
Current (VBE = -5V)
VCE = VCEV
VCE = VCEV
VCE = VCEV
VCE = VCEV
Tj = 100 oC
Tj = 100 oC
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
hFE∗ DC Current Gain
VEB = 5 V
IC = 0.2 A L = 25 mH
Vclamp = 450 V
IC = 32 A VCE = 5 V
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = 32 A IB = 6.4 A
IC = 32 A IB = 6.4 A Tj = 100 oC
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 32 A IB = 6.4 A
IC = 32 A IB = 6.4 A Tj = 100 oC
diC/dt Rate of Rise of
On-state Collector
VCC = 300 V RC = 0 tp = 3 µs
IB1 = 9.6 A Tj = 100 oC
VCE(3 µs) Collector-Emitter
Dynamic Voltage
VCC = 300 V RC = 9.3 Ω
IB1 = 9.6 A Tj = 100 oC
VCE(5 µs) Collector-Emitter
Dynamic Voltage
VCC = 300 V RC = 9.3 Ω
IB1 = 9.6 A Tj = 100 oC
ts
Storage Time
tf
Fall Time
tc
Cross-over Time
IC = 32 A VCC = 50 V
VBB = -5 V RBB = 0.39 Ω
Vclamp = 450 V IB1 = 6.4 A
L = 78 µH Tj = 100 oC
VCEW Maximum Collector
ICWoff = 48 A IB1 = 6.4 A
Emitter Voltage
VBB = -5 V VCC = 50 V
Without Snubber
L = 52 µH RBB = 0.39 Ω
Tj = 125 oC
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ.
450
12
0.35
0.6
1
0.9
160 210
4.5
2.5
2.2
0.2
0.45
450
Max.
0.4
2
0.4
2
2
1.2
2
1.5
1.5
8
4
4.5
0.4
0.7
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
A/µs
V
V
µs
µs
µs
V
2/7
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