2SC4388 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SC4388 Datasheet PDF : 2 Pages
| |||
L/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC4388
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min)
• Good Linearity of hFE
• Complement to Type 2SA1673
APPLICATIONS
• Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25-C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
180
V
VEBO Emitter-Base Voltage
6
V
Ic
Collector Current-Continuous
15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
4
A
85
W
150
'C
Tstg
Storage Temperature Range
-55-150 •c
f
„,
pIN 1 BASE
2. COLLECTOR
3. EMITTER
TO-3PML package
-* c —
4t:r....!
*"
U
A
I1-
H
K*
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— !•
" • 4 • - VC"* ' •/ '.
z
4
G
f"
T
-"'"
mm
DIM WIN MAX
A 19.90 20.10
B 15.90 16.10
C 5.50 5,70
D 0,90 1,10
F 3.30 3.50
G 2.90 3.10
H 5.90 6.10
J 0.595 0.605
K 22.30 22.50
L 1,90 2.10
N 10.80 11.00
Q 4.90 5.10
R 3.76 3.95
S 3.20 3.40
U 9.90 10.10
V 4.70 4.90
z 1.90 2.10
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information Furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time of going
to press. Ilowever, N.I Semi-Conductorsassumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customersto verify that datasheets are current before placing orders.
Quality Semi-Conductors
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