2SC4388 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SC4388 Datasheet PDF : 2 Pages
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Silicon NPN PowerTransistor
2SC4388
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 50mA; IB= 0
VoE(sat) Collector-Emitter Saturation Voltage lc= 5A; IB= 0.5A
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; lc= 0
hFE
DC Current Gain
lc= 3A; VCE= 4V
COB
Collector Output Capacitance
|E=0;VCB=10V;f=1MHz
ft
Current-Gain—Bandwidth Product
IE=-0.5A; VCE=12V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc= 10A;RL=4Q; Vcc= 40V;
IB1=-IB2=1A
MIN TYP. MAX UNIT
180
V
2.0
V
10
uA
10
uA
50
300
PF
20
MHz
0.5
us
1.8
us
0.6
us
tips Classifications
0
P
Y
50-100 70-140 90-180
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