IRFE230 View Datasheet(PDF) - Semelab - > TT Electronics plc
Part Name
Description
Manufacturer
IRFE230 Datasheet PDF : 2 Pages
| |||
IRFE230
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
1.27 (0.050)
1.07 (0.040)
11
7.62 (0.300) 10
7.12 (0.280)
9
8
9.14 (0.360)
8.64 (0.340)
12 13 14 15 16
1.39 (0.055)
1.02 (0.040)
17
18
1
2
0.76 (0.030)
0.51 (0.020)
76543
1.39 (0.055)
1.15 (0.045)
1.65 (0.065)
1.40 (0.055)
0.33
0.08
(0.013)
(0.003)
Rad.
0.43 (0.017)
0.18 (0.007 Rad.
≈ 2.16 (0.085)
MOSFET
GATE
DRAIN
SOURCE
LCC4
TRANSISTOR
BASE
COLLECTOR
EMITTER
PINS
4,5
1,2,15,16,17,18
6,7,8,9,10,11,12,13
VDSS
ID(cont)
RDS(on)
200V
4.8A
0.46Ω
FEATURES
• SURFACE MOUNT
• SMALL FOOTPRINT
• HERMETICALLY SEALED
• DYNAMIC dv/dt RATING
• AVALANCHE ENERGY RATING
• SIMPLE DRIVE REQUIREMENTS
• LIGHT WEIGHT
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current
(VGS = 10V , Tcase = 25°C)
4.8A
ID
Continuous Drain Current
(VGS = 10V , Tcase = 100°C)
3.1A
IDM
Pulsed Drain Current 1
19A
PD
Power Dissipation @ Tcase = 25°C
22W
Linear Derating Factor
0.17W/°C
EAS
dv/dt
Single Pulse Avalanche Energy 2
Peak Diode Recovery 3
54mJ
4.5V/ns
TJ , Tstg
Operating and Storage Temperature Range
Surface Temperature ( for 5 sec).
-55 to +150°C
300°C
Notes
1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%
2) @ VDD = 50V , L ≥ 570µH , RG = 25Ω , Peak IL = 14A , Starting TJ = 25°C
3) @ ISD ≤ 14A , di/dt ≤ 140A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 7.5Ω
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
10/98
Share Link: 