IRFE230
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage VGS = 0
ID = 1mA
200
∆BVDSS Temperature Coefficient of
Reference to 25°C
∆TJ Breakdown Voltage
ID = 1mA
Static Drain – Source On–State
RDS(on) Resistance 1
VGS = 10V
VGS = 10V
ID = 3.1A
ID = 4.8A
VGS(th) Gate Threshold Voltage
gfs
Forward Transconductance 1
VDS = VGS
ID = 250mA
2
VDS ≥ 15V
IDS = 3.1A
2.5
IDSS Zero Gate Voltage Drain Current
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
IGSS Forward Gate – Source Leakage
VGS = 20V
IGSS Reverse Gate – Source Leakage
VGS = –20V
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
VGS = 0
Coss Output Capacitance
VDS = 25V
Crss Reverse Transfer Capacitance
f = 1MHz
Qg
Total Gate Charge
VGS = 10V
7.4
Qgs Gate – Source Charge
ID = 4.8A
2.5
Qgd Gate – Drain (“Miller”) Charge
VDS = 0.5BVDSS
6.0
td(on)
tr
td(off)
tf
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
VDD = 100V
ID =4.8A
RG = 7.5Ω
SOURCE – DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current
ISM
Pulse Source Current 2
VSD Diode Forward Voltage 1
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge 1
ton
Forward Turn–On Time
PACKAGE CHARACTERISTICS
IS = 4.8A
TJ = 25°C
VGS = 0
IF = 4.8A
TJ = 25°C
di / dt ≤ 100A/µs VDD ≤ 50V
LD
Internal Drain Inductance (measured from 6mm down drain lead to centre of die)
LS
Internal Source Inductance (from 6mm down source lead to source bond pad)
THERMAL CHARACTERISTICS
RθJC Thermal Resistance Junction – Case
RθJPC Thermal Resistance Junction – PC Board
Typ.
0.25
600
250
80
Negligible
1.8
4.3
Max.
0.40
0.46
4
25
250
100
–100
42.1
5.3
28.1
30
50
50
40
4.8
19
1.4
6.0
3.0
5.8
19
Unit
V
V/°C
Ω
V
S (É)
µA
nA
pF
nC
ns
A
V
ns
µC
nH
°C/W
Notes
1) Pulse Test: Pulse Width ≤ 300ms, δ ≤ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
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